Evaluation of the Effectiveness of Silicon Dioxide on Some Germination and Vegetative Growth Parameters of Radish Cultivars in Saline Conditions

The salt tolerance level of the radish (Raphanus sativus L.), which has a rich nutritional content, varies depending on cultivar (cv). In this study, was carried out using two cv. (big red, little red), it aimed to determine effect exogenous silicon dioxide (0.5, 1, 1.5, 2 mM SiO2) applications germination and vegetative growth parameters under stress conditions (150 NaCl). After determining percentage (GP), index (GI), rate coefficient (CVG), mean time (MGT) (GRI) for germinating seeds, shoot root length (mm), leaf width fresh weights (g) were measured seedling vigour (SVI) calculated. SiO2 had positive effects in both cultivars non-stress conditions. While 1.5 application caused an increase red cultivar, determined that 1 more effective increased by fold (from 24% 48%). big cv., salinty unsalinity Exogenous pre-treatment also stressed unstressed According results variance analysis, interaction (***p<0.001) between all other except weight. dose significantly similar obtained as result application.